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4hv.org :: Forums :: General Science and Electronics
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mosfet current rating and half-cycles

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IamSmooth
Tue Jul 06 2010, 11:14PM Print
IamSmooth Registered Member #190 Joined: Fri Feb 17 2006, 12:00AM
Location:
Posts: 1567
I have a question about the maximum amount of current a mosfet can take. If I have a half-bridge using two mosfets each rated at 50A @ 25C, and the current waveform reads 50A rms, does each mosfet see 25A? Is it safe to operate the mosfet like this, or is the 50A rating with regard to the peak currents? Assume for this question that the temperature is kept at 25C.
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Arcstarter
Wed Jul 07 2010, 01:47AM
Arcstarter Registered Member #1225 Joined: Sat Jan 12 2008, 01:24AM
Location: Beaumont, Texas, USA
Posts: 2253
Look carefully at the way the H bridge works. Each mosfet sees the same current, hence the series arrangement of the two fets.

But, they see less voltage than, say, single mosfet/class E. The mosfets only have to be rated for 1x (plus safety margin) the input voltage in an H bridge or halfbridge, but more like 3.3 times with class E.
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Dr. Slack
Wed Jul 07 2010, 07:14AM
Dr. Slack Registered Member #72 Joined: Thu Feb 09 2006, 08:29AM
Location: UK St. Albans
Posts: 1659
The 50A rating is just that, a "rating". Which means a simplification, having taken into account many unacknowledged assumptions (like the expected lifetime, the anticipated transients the user will throw at it in their unspecified application). Bear in mind that commercial stuff is sold to commercial users, who want 99.99% of their product to work for 1000s of hours, so you can expect ratings to be conservative. If you are happy with 10s of hours service, and cool with occaisional failure, then use MOAR POWA. Often it's not the thing your are deliberately stressing that causes failure, so keep voltage transients under control whether you are pushing the current ratings or not.

Dig deeper into the data sheet to sort out the limitations due heat capacity of the conducting element and bond wires (short pulse, I2t), heat capacity of the die (longer pulse I2t), thermal conductivity of the heatsink (long term power dissipation), electromigration (long term current density), thermal balance of adjacent cells (safe operating area).

In an H bridge, devices don't conduct for 100% of the time, so already you have a distinction between peak and continuous ratings.

Or just buy more than you need, and sacrifice a few by testing in your application to destruction (use more power until it breaks, then back off a bit) in the name of knowledge.
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GeordieBoy
Wed Jul 07 2010, 10:30AM
GeordieBoy Registered Member #1232 Joined: Wed Jan 16 2008, 10:53PM
Location: Doon tha Toon!
Posts: 881
For a complete sinewave (with positive and negative half-cycles present) the RMS value is equal to 0.707 times the peak value. Note that it doesn't matter whether both half-cycles are different polarity (i.e. positive and negative) or if the waveform is rectified and they are of the same polarity. For a complete sinewave the RMS value is equal to the peak value devided by sqrt(2).

If you chop off one of the half-cycles, then the RMS current of this "half-wave rectified" sinewave is equal to 0.5 times the peak value. By cutting out one of the half-cycles you reduce the RMS value by another 1/sqrt(2)

So a 50A rated MOSFET would theoretically be able to carry single half-cycles of a 100A peak sinewave! (Assuming of course that you can keep the die temperature low enough that it's current handling ability doesn't need to be derated, and there are no other losses like switching losses or avalanche losses!)

It is virtually impossible to run a device right at its ratings though! This is because heatsinking requirements become un-manageable, and the slightest bit of foreign material between the device backplate and heatsink will impair thermal conductivity. As Dr Slack said, you would put a very healthy safety margin on the device's current rating or parallel up several MOSFETs to trade off cost against reliability in a commercial application.

Hope this helps,

-Richie,
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