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Registered Member #190
Joined: Fri Feb 17 2006, 12:00AM
Location:
Posts: 1567
I've tried to run two identical IGBTs (HGTG40N60A) in parallel. I plan to try some 1000v models, too. The wires to the common and emitter are the same length. The gate drive (base) is shielded to ground with a ferrite bead at the end. The waveform is not as clean as when I run one chip. Also, during a limited power test, one chip was warmer than the other. This makes me fear that the chips are not sharing the current equally. Would a 10k resistor from the base to the emitter on each chip help? Is there a simple way to test each chip to make sure they are sharing the current equally? I was thinking of wrapping some turns of wire around one of the leads of each chip and comparing the phase and amplitude on a scope. If they differ my question would be what parameters I can change? The resistance to the base? Resistance between the base and emitter?
Registered Member #235
Joined: Wed Feb 22 2006, 04:59PM
Location:
Posts: 80
Do you have the IGBTs on the same heat sink? High side and low side seperate, of course. Even with a positive temperature coefficient, I understand you still want to put the paralleled devices on the same heat sink so their Tamb is the same.
Registered Member #1403
Joined: Tue Mar 18 2008, 06:05PM
Location: Denmark, Odense C
Posts: 1968
Is your driver powerful enough to drive two IGBTs?
also googled stuff, if you haven't already found it yourself.
http://www.dataweek.co.za/news.aspx?
pklNewsId=27983&pklCategoryID=46 wrote ...
The following is a list of guidelines for paralleling IGBT discretes, which in many ways parallels those for paralleling MOSFETs:
1. Each IGBT device must have its own gate resistor.
2. Arrange lay-out of devices so that the current paths are symmetrical.
3. Mount the parallel parts next to each other on the same heatsink so that they are thermally coupled.
4. All the paralleled parts within 'one switch group' should have the following characteristics:
a. Be made from silicon dice from the same wafer lot (see below).
b. Threshold voltages should be matched to within 0,10 V.
c. Saturation voltages at normal operating current level should be matched to within 0,05 V.
5. If the IGBT component contains an anti-parallel diode, match the forward voltage drop of the diode to within 0,1 V.
6. If it proves impractical to perform the matching outlined in step 4, then insert a resistor in series with each emitter to force current sharing. Pick a standard value for the resistor that is closest to 0,2 V divided by the nominal current per IGBT. Resistor tolerance should not be greater than 1%.
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running IGBTs in parallel
