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Registered Member #2411
Joined: Sat Oct 03 2009, 05:50PM
Location: South Texas, USA
Posts: 11
Im looking at Mosfets specifically. My question is about how is the leakage current (Drain to source) can be found. From various data sheets, i found that a "test condition" is used (ex: vgs=100v Idss=10uA). So, they apply 100v across the mosfet (vd=100v vs=vg=0v) and measure the current?
My question is: Can you get the same leakage current by applying a short pulse across the mosfet (say 100v for 10us) and measuring the resulting current durring that pulse? Do i need to take anything else into consideration?
Registered Member #162
Joined: Mon Feb 13 2006, 10:25AM
Location: United Kingdom
Posts: 3141
There is internal capacitance from Drain to Gate which will cause a current to flow for a short while, if the resistance from Gate to Source (your measuring system) is too high relative to Cdg x dVds/dt then the transistor will turn on for a while too.
Registered Member #30
Joined: Fri Feb 03 2006, 10:52AM
Location: Glasgow, Scotland
Posts: 6706
wrote ... So, they apply 100v across the mosfet (vd=100v vs=vg=0v) and measure the current?
Yes, that's exactly what they do!
The pulsed method is used when a measurement with continuous current would cause the device to heat up. This is not wanted because semiconductor characteristics shift with temperature, and the manufacturer wants to specify them at 25'C.
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Leakage current Question
