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I am building a coilgun, using an IGBT to close the circuit, and to empty the capacitor into the coil. What I don't understand is that I have burnt three IGBT so far... Here is the circuit I use, does somebodyknow what is wrong in it ?
I guess I burnt two of them with a current that was over their limits. However, I really don't understand why I burnt the third one, which is said to be a N-channel working at 600 V, 300 A at peak current. (According to the usual RLC equations, the current flowing in my circuit doesn't exceed 200 A during 1 ms)
NB : I don't want to use an SCR, I really want to use an IGBT. Could someone explain what doesn't work in this circuit ? Thanks a lot
(The battery is 9.5 V, this should be all right) Thanks for your advice. Indeed, I could enhance my circuit. Yet, do you think the strong resistor and the bounce effect could burn my IGBT ? Or does it "only" reduce the efficiency of my circuit ?
Registered Member #511
Joined: Sat Feb 10 2007, 11:36AM
Location: Somerset UK
Posts: 55
Hi magictomcat
The switch SW1 could cause you problems.
After charging when you change the switch over to the fire position you are suddenly changing the voltage accross the IGBT from 0V to 330V, this high dV/dt signal could be a problem, It is very unwise to do this to SCR`s I`m not sure about IGBT`s.
Switch SW1 is in the high current circuit, can this switch handle 200A? It may be better to have the capacitor hard wired into the circuit.
Registered Member #1232
Joined: Wed Jan 16 2008, 10:53PM
Location: Doon tha Toon!
Posts: 881
you are suddenly changing the voltage accross the IGBT from 0V to 330V, this high dV/dt signal could be a problem, It is very unwise to do this to SCR`s I`m not sure about IGBT`s.
dv/dt induced turn-on is certainly possible with IGBT's if you use a 47k gate resistor!
Registered Member #1464
Joined: Sat May 03 2008, 10:56AM
Location:
Posts: 9
Hi, I'm new here, and as first I want to apologize for my english - I'm working on it. I'm from Slovakia, my hobby is electronics, robotics and all around of coilguns. Last 3 months I try to develop a low power and effective coilgun (kinetic energy 2J, eff. at least 8%), and I focused on multistage IGBT halfbridge design. I spend lot of time while my design start work (partially) and I must react on this problem. At first, is necessary to understand how IGBT's working - this device combine characteristics of BJT and FET transistors, is controled by voltage betwen G and E. To switch this device on, the Gate must charge to min. 9 volt, but to fully open is better 12 - 20 volt. As soon it is charged, the switching loses will be smaller. For 100nC charge (common value - see your datasheet) 9.5V and 47k resistor, it will charge after 0.5ms and this is terrible. On my design time of charging on is 1us and charging off 0.5us (this values aren't best). Your IGBT is melt inside (cause switching loses) after you try to turn on SW2. Gate resistor must be smallest as possible (at other side very fast switching means very large dV/dt and this may cause interference in switching logic) and you need strong current source to control Gate of IGBT. For this purpose is good to use driver (IC, for example IR2101 from IRF), or simple "push-pull" circuit. Gate is very vulnerable to voltage over 20V - is good to use 18V transil diode between gate and emitor. If you use IC don't forget to decoupling capacitors. Aplications with IGBT modules are not simple and easy (like SCR). If you don't understand what I wrote, internet is the good place to improve your knowledge.
thbnk you Is 18v good enough with 1kohm gate resistor?and can you explain what dv/dt,switching loser and transil diode? To turn on we can apply minus 18 v and plus 18 for off? Thx
Registered Member #1464
Joined: Sat May 03 2008, 10:56AM
Location:
Posts: 9
To calculate switching time I using a simple formulas, like I=U/R and t=C/I where U is voltage on gate, R is gate resistor, t is switching time and C is gate charge of IGBT (this is only for estimating, not for exact values). In your case (18V, 1kohm, charge 100nC?) t=5usec - it is slow.
Why you want use 1kohm gate resistor? My IGBT driver deliver max 200mA current (in 12V, therefore my gate resistor is 47ohm), if your driving circuit can supply more current...
The dV/dt is amonut of change of voltage per time unit. Very large changes means very large EM field and thereafter possibility of induced currents in others electronic circuits.
Transil diode is protective component. It is similar to zener diode, but is faster and can absorb more energy.
About switching loses - characteristics of transistor (as switch) belongs to basic electronics knowledge, is a lot of it.
I hope that my post will help to save life some IGBTs
The problem of the current flowing into the gate still remains. The current flowing through the coil peaks at 400 A (for 1ms). When I toggle the switch from A to B, is there any risk that a high current flows into the gate ? To to be sure not to harm my IGBT, I am now using a strong gate resistor (R on the sketch), but it implies a high switching time... To protect the gate, would putting a diode on the "B" wire be efficient (if it cuts the contact between the gate and the emittor, what would the IGBT work like ?).
You wrote about your driving circuit. Mine is the obviously the problem in my circuit. What is yours like ? Is ther a chance I could use it to control my IGBT ?
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