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Registered Member #2906
Joined: Sun Jun 06 2010, 02:20AM
Location: Dresden, Germany
Posts: 727
Well given the datasheet, the salesman that went over the datasheet after the engineers thought it would be good for "Down Hole Oil Drilling". So i guess SiC is very hard, so you put it on the tip of a drill and just slam it in the ground until the oil comes out.
I dont know. Obiously its a very fast device. Its kind of the opposite of an IGBT Its interesting for everything that benefits from fast switching. Flybacks, active rectification and induction heating i guess. It also seems to have reasonable linearity.. so one could build an audio amplifier for bats and above. I still prefer the drilling. i wonder if the die comes in various sizes. Every hole is different!
I am sorry, i honest cant figure any perfectly matched application. every SMPS topology where such fast switching would be beneficial automatically suffers from leakage inductance. So the only thing i can construct in my mind is a 1.2kV >50kHz SMPS. But what for?
Registered Member #33
Joined: Sat Feb 04 2006, 01:31PM
Location: Norway
Posts: 971
DerAlbi wrote ...
Well given the datasheet, the salesman that went over the datasheet after the engineers thought it would be good for "Down Hole Oil Drilling". So i guess SiC is very hard, so you put it on the tip of a drill and just slam it in the ground until the oil comes out.
I dont know. Obiously its a very fast device. Its kind of the opposite of an IGBT Its interesting for everything that benefits from fast switching. Flybacks, active rectification and induction heating i guess. It also seems to have reasonable linearity.. so one could build an audio amplifier for bats and above. I still prefer the drilling. i wonder if the die comes in various sizes. Every hole is different!
I am sorry, i honest cant figure any perfectly matched application. every SMPS topology where such fast switching would be beneficial automatically suffers from leakage inductance. So the only thing i can construct in my mind is a 1.2kV >50kHz SMPS. But what for?
The oil drilling application sounds very strange but this is actually one of the main technical fields driving the development of high temperature electronics. Data logging equipment for borehole use often has to work for extended periods at 150 degrees celsius.
I agree that it looks like the opposite of an IGBT, it seems to have a BJT-like input characteristic and a MOSFET-like output characteristic.
These devices are well suited for resonant converter topologies, where the leakage inductance is used to perform a useful function in the circuit. 900V or 1200V devices are more practical here though. The niche for 1700V devices is for flyback converters running from a DC bus voltage of 600 + volts, such as in converters running off rectified 480 V AC, as far as I know
These devices seem to have an advantage over SiC MOSFETs when it comes to current handling, but they have a significantly higher cost per ampere (compared to a similarly rated SiC MOSFET) and driving the larger ones can be difficult.
Registered Member #2906
Joined: Sun Jun 06 2010, 02:20AM
Location: Dresden, Germany
Posts: 727
Wolfram i understand the tenperature problems, no worries, its still hillarious
What i dont get is why the SiC-Technology is packaged so poorly. I mean look at the leakage current! Hooooly smoke! <1µA @ 1.7kV. There is sooooo much more possible. Even with pure Si-Technology the packages are the actual temperature limit (thats why full metal packages known from the 2N3055 are rated for >200°C while all the epoxy based packages quit at 150°C or nowadays at 175°C. I calculated once from a IGBT short circuit ratring, that the actual die-temperature can reach 700°C bfore critical failure. I also know that Mosfets operate happily while the die internally already melted the solder to the mounting base... (ok, i have surely no lifetime data on that ^_^) Its all the packaging with primitive components.
I dont really know why you need fast switching for resonant topologies... afaik the upside to those topologies is indeed that the switches can be relatively slow due to reduced switching losses anyway. So it would be a waste imho. Flybacks.. well maybe, if you have a really powerful one... but why would you build a flyback for that.. high power excludes flybacks usually. hmmmmh.
Registered Member #230
Joined: Tue Feb 21 2006, 08:01PM
Location: Gracefield lower Hutt
Posts: 284
DerAlbi once the junction goes over 200 degrees C for silicon the dopants are mobile and characteristics change. For SiC this is much much higher 350 degrees and or above. So dodgy thermal attach is not a problem who cares if junction to case goes up 75 or even a hundred degrees more than sillycon, the heat still gets out and the dopant migration is still in bounds for a decent MTBF
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MOSFET/BJT Lovechild
Its interesting for everything that benefits from fast switching. Flybacks, active rectification and induction heating i guess. It also seems to have reasonable linearity.. so one could build an audio amplifier for bats and above. 
