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Registered Member #3900
Joined: Thu May 19 2011, 08:28PM
Location:
Posts: 600
they have an avalanche rating of 2 joules. so it acts as a tvs in itself. you wont need to worry about over-voltage unless there is significant current behind it or it is significantly long enough to equate to >=2J. i find that voltage kills power switches much faster than current, and unless you have massive surge current, you will be forewarned by the heating of the device. if you expect to have greater energy than two joules or you are feeling paranoid, just slap a string of 1.5KE220CA in there for 440V or use different diodes in the series to bring the breakdown level of the string to as close to 600v as you dare.
Registered Member #1792
Joined: Fri Oct 31 2008, 08:12PM
Location: University of California
Posts: 527
Tom Williamson wrote ...
what does the gate capacitence cause, i have no experiance in such things saddly
A higher gate capacitance means that it takes longer to switch from on-state to off-state, or vice-versa *. While in between the two states there is a lot of power being dissipated as the FET is in a high-resistance state. So having a higher gate capacitance increases the switching loss. If switching loss is too high, you need to decrease the frequency, because the switching loss is incurred once per switching cycle.
In general to optimize power dissipation in a FET you want to have the switching loss and on-state conduction loss to be equal.
* Just as a side note the gate capacitance is technically nonlinear, so for power FETs the gate charge is generally of more interest than capacitance, but you can come up with effective capacitances related to the energy stored, time to discharge, or small-signal, which more detailed datasheets will include and distinguish between.
Registered Member #1792
Joined: Fri Oct 31 2008, 08:12PM
Location: University of California
Posts: 527
Tom Williamson wrote ...
ok, so how bad are these mosfets for a Full bridge?
There is no single answer to that question, it depends way too much on your specific design and specifications. But as the SiHG73N60E handles a larger current with less on-resistance than the also-mentioned IRFP260, the SiHG73N60E will be tend more suited to a design with a higher current, or the same current at a lower frequency.
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What should i make with these?
