Ge-Te switch technology "could outdo memristors"
|
|
Conundrum
|
Wed May 04 2011, 04:32PM
|
|
|
Registered Member #96
Joined: Thu Feb 09 2006, 05:37PM
Location: CI, Earth
Posts: 4062
|

Needless to say, this could marginalise TiO2 memristors because the switches are several tens of times faster and have a much larger on/off ratio of resistances which implies a larger range of potential intermediate values. Also Ge-Te is a metallic alloy which is known to be much more stable over long time periods, as CDRWs have shown.
A hypothetical microSD replacement could go well over 100GB with a much simple device structure on a single chip rather than dozens.
-A
|
Back to top
|
|
Patrick
|
|
Registered Member #2431
Joined: Tue Oct 13 2009, 09:47PM
Location: Chico, CA. USA
Posts: 5639
|
Wow, this is really taking off, I first learned of the Memristor about 2 years ago, and it just keeps getting better. Now the've modified this kind of "phase change" to make a switch... this has real potential.
|
Back to top
|
|
Moderator(s): Chris Russell, Noelle, Alex, Tesladownunder, Dave Marshall, Dave Billington, Bjørn, Steve Conner, Wolfram, Kizmo, Mads Barnkob
|
|
Powered by e107 Forum System
|