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Registered Member #96
Joined: Thu Feb 09 2006, 05:37PM
Location: CI, Earth
Posts: 4061
Needless to say, this could marginalise TiO2 memristors because the switches are several tens of times faster and have a much larger on/off ratio of resistances which implies a larger range of potential intermediate values. Also Ge-Te is a metallic alloy which is known to be much more stable over long time periods, as CDRWs have shown.
A hypothetical microSD replacement could go well over 100GB with a much simple device structure on a single chip rather than dozens.
Registered Member #2431
Joined: Tue Oct 13 2009, 09:47PM
Location: Chico, CA. USA
Posts: 5639
Wow, this is really taking off, I first learned of the Memristor about 2 years ago, and it just keeps getting better. Now the've modified this kind of "phase change" to make a switch... this has real potential.
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Ge-Te switch technology "could outdo memristors"
