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Registered Member #2115
Joined: Fri May 08 2009, 01:17PM
Location: Singapore
Posts: 46
Hi all
I'm just curious on the differences between primary side and secondary side gate resistors in gate driver circuit. Is there any difference in performance between having a big primary side resistor vs 2 or 4 gate resistors at each of the MOSFET gates? Will performance be the dsame if the primary resistor is sized the same as the parallel value of the secondary resistors?
And how should the value an power rating of the resistors be found? Is it by pure experementation?
Registered Member #15
Joined: Thu Feb 02 2006, 01:11PM
Location:
Posts: 3068
I would always put a small value resistor right next to the gate of a MOSFET. Its important to get this as close as possible, and to also couple both outgoing and return lines (from the MOSFET) to reduce inductance. This will provide for a better gate waveform and reduce an oscillation due to parasitics. The gate resistor provides damping to reduce parasitic oscillations as well as limit the peak charge current into the gate which makes it more prone to parasitic oscillations. A value of 1-10 ohms is typically used.
I almost always us 5.1 resistor for my DRSSTC gates (low frequency), and for my 4MHz coils which use 14A IXYS gate drivers, I use 1.6 ohm gate resistors.
Registered Member #2292
Joined: Fri Aug 14 2009, 05:33PM
Location: The Wild West AKA Arizona
Posts: 795
Gate resistors also help to slow the rate of turn on so that to add dead time to each switching cycle. This dead time helps to prevent shoot through (shorting of the bus for a short amount of time on each cycle).
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SSTC/DRSSTC gate resistors
