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Registered Member #1025
Joined: Sun Sept 23 2007, 07:53PM
Location: Czech Rep.
Posts: 566
Dr. Kilovolt wrote ...
Mates wrote ...
Dr. Kilovolt wrote ...
The MOSFET protect itself from overvoltage destruction by mechanism called avalanche breakdown. It can usually clamp the same current as it can switch, limited only by junction temperature.
I disagree Jan, most of today’s FET and IGBT transistors are indeed avalanche rated, but the energy they can handle in avalanche mode is much smaller than the switching energies in case the avalanche switch is repetitive. I have a huge collection of HV spikes destroyed FETs which all could have been saved in case I would use TVS. Avalanche mode is definitely unwanted situation for every transistor and using TVS is something I would always recommend even if the used transistors are avalanche rated.
Well... I have seen your line-powered single switch drivers... I guess then, they simply overheated by the huge amount of avalanche... If you look at a few MOSFET datasheets, you'll usually see something along the lines that the maximum avalanche current is the same as maximum on-state current, and that the avalanche dissipation is limited only by maximum junction temperature allowed.
On the other hand, IGBTs are usually NOT avalanche rated.
OK, I don’t want to argue based on theory and datasheets. My arguments are based on my personal experience. I can suggest you a simple experiment which will cost you an avalanche rated FET, but you get an idea of what I’m talking about. Simply switch the primary of an ignition coil using some robust (16A 600V) avalanche rated FET/IGBT in series with the primary at 3 KHz. As a power source use the rectified mains with some kind of current limiter which will allow maximum of 4A. You will get destroyed transistor very quickly despite the transistor is cold, because of the HV spikes. In case you add a TVS it will protect the transistor, but it will get hot very quickly. Thus, according to my expensive experience avalanche rated transistors are not the same as transitors protected by the TVS in case of repetitive switching of inductive loads in higher frequency rate (above 1 KHz).
BTW: I don’t know how rare are the avalanche rated IGBT’s, but all the IGBT’s I ever had in my hands were always avalanche rated…
Registered Member #30
Joined: Fri Feb 03 2006, 10:52AM
Location: Glasgow, Scotland
Posts: 6706
"Avalanche rated" doesn't mean anything on its own. The manufacturer must qualify it with the avalanche energy and power that the device can stand reliably. This can vary widely between devices.
For high voltage IGBTs, I'd expect it to be much less than the device's rated dissipation, maybe 10 watts or so. Some low-voltage MOSFETs are so good that you can tie the gate to the source and use them as 50 watt Zeners.
On the other hand, the power rating of a TVS is its avalanche rating.
Another important point that I don't think anyone made: A TVS clamps overvoltage. An ordinary diode only clamps reverse voltage. Those are two fundamentally different functions.
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