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Registered Member #146
Joined: Sun Feb 12 2006, 04:21AM
Location: Austin Tx
Posts: 1055
Looks fine, just make the physical layout very low inductance (mount the DC electrolytic caps as close to the IGBTs as possible, and make all connections short and wide). Depending on what IGBTs you use, you might find that a laminate bus structure would suit your needs (see my DRSSTC 2 page for an example).
Registered Member #512
Joined: Sat Feb 10 2007, 05:42PM
Location: Chico, CA
Posts: 25
I'll make a note of that Steve. I've been reading the DRSSTC-2 page very closely. I really can't afford to blow any IGBTs. One thing I must ask you. After experiencing IGBT failure, you tried a 20 ohm resistor at the gate. did it really help with those transients?
Registered Member #146
Joined: Sun Feb 12 2006, 04:21AM
Location: Austin Tx
Posts: 1055
Its hard to say if the higher resistance helped or not. The problem is that while it slows the switching speed (lessening di/dt), it increases the current being switched because of the time delay. I think i ended up with 5 or 10 ohms ultimately. The 5.1 ohms you show is probably a good start for the gate resistance particularly because you are trying to use a GDT for the IGBTs (which will be a little slower on the transition times than my direct drive).
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