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Registered Member #72
Joined: Thu Feb 09 2006, 08:29AM
Location: UK St. Albans
Posts: 1659
I seem to have taken my eye off the ball for the last couple of years, but have suddenly woken up to the fact that GaN seems to be all over the market in sensible powers like 600v 20A cont 80A peak, with sub 10nS rise and fall times.
I feel a paper design coming on! I've always had a hankering to make a solid state magnifier, rather than a DRSSTC. The higher frequency may permit an air-cored transformer with manageable primary current without the need for resonance, and so rather simpler dynamic control.
I've not seen any threads of people working on GaN TCs, are there any?
Registered Member #1403
Joined: Tue Mar 18 2008, 06:05PM
Location: Denmark, Odense C
Posts: 1968
There are some older threads where some issues with using them are discussed. I can not find them right now, but I recall it was about the different driving voltages needed for turn-on/turn-off.
Registered Member #72
Joined: Thu Feb 09 2006, 08:29AM
Location: UK St. Albans
Posts: 1659
Yes, I'd seen SiC discussed, but that technology has been a long time coming and isn't delivering like GaN. I think a major practical difference is that GaN is compatible with relatively standard silicon processing, whereas SiC is not, so there's been an explosion available types. The gate voltage is typically a more conventional +/- 20v as well. SiC still has its high temperature advantage, but its speed lunch has been eaten by GaN.
Primary to secondary power transfer is proportional to primary and secondary current and also frequency. So a high frequency helps. Running outside the secondary resonance is somewhat of a problem since it implies less secondary current.
Registered Member #11591
Joined: Wed Mar 20 2013, 08:20PM
Location: UK
Posts: 556
Dr. Slack wrote ...
Yes, I'd seen SiC discussed, but that technology has been a long time coming and isn't delivering like GaN. I think a major practical difference is that GaN is compatible with relatively standard silicon processing, whereas SiC is not, so there's been an explosion available types. The gate voltage is typically a more conventional +/- 20v as well. SiC still has its high temperature advantage, but its speed lunch has been eaten by GaN.
I like SiCs, especially for their low (relative to GaN) price, and their HUGE benefits over IGBTs and conventional MOSFETs, one only has to be careful not to put too much negative voltage on them, and they work just the same as normal 'FETs There are also several manufactures now selling SiC, but my last look around a couple of weeks ago concluded that Wolfspeed (CREE) still leads.
GaNs are brilliant for really high frequencies, but for normal switching speeds I think SiC has the edge.
Registered Member #72
Joined: Thu Feb 09 2006, 08:29AM
Location: UK St. Albans
Posts: 1659
@Uspring - running on the secondary resonance, but with a non-resonant primary. Moving the coupled section and resonant section apart to make a magnifier arrangement with a discrete transformer section.
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GaN FETs for high frequency SSTCs
