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I am planning on finishing my tesla coil finally, and I'm stuck at something I can't seem to find a direct answer to.
This coil will be a plain SSTC, but once I have it working I plan on converting it to a DRSSTC. I know MOSFETs aren't recommended for a DRSSTC, but this coil will be small with a high impedance primary circuit. Resonant frequency will be about 600kHz, and I will be using a full bridge.
Both of these should be fast enough to run the coil, and should be able to withstand the high pulsed current of the future DRSSTC. I only plan on running around 200 amps primary current when I get that far.
My question is, is which of these do you think would work better as far as a thermal standpoint? The MOSFETs have better junction to case, and case to sink figures, but I'm not sure whether the Rds is too high for this application. I have plenty of experience with MOSFETs, but have never used IGBTs before, which is the main reason I am asking.
Registered Member #152
Joined: Sun Feb 12 2006, 03:36PM
Location: Czech Rep.
Posts: 3384
Depends on if you are planning to use phase lead, which you should anyway for such a high frequency. IGBTs tolerate somewhat wider detuning but the switching losses are much greater. FETs don't like resonant loads on the capacitive side, which is the case of a DRSSTC with direct-amplifying feedback. I personally would go with the IGBTs and use phase lead.
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MOSFET vs IGBT
