Precursor solution for fabricating IZO thin films was prepared by
dissolving 0.1 M of zinc acetate dihydrate
ZnOAc2·2H2O and
0.1 M of indium acetate
InOAc3 in 2-methoxyethanol at 50°C.
ZnOAc2·2H2O has limited solubility in alcohols and its precursor
solution is easily precipitated or gelled. InOAc3 is not soluble in
2-methoxyethanol. Thus, ZnOAc2·2H2O and InOAc3 require
stabilizing agents for dissolution and formation of stable sol.20-23
Diethanolamine
DEA
of 0.4 M and acetylacetone
acac
of 0.4 M
were used to stabilize the IZO precursor solution.
Heavily boron
p

-doped silicon substrate was used in an
inverted-gate structure for the fabrication of IZO-based TTFTs. Silicon
dioxide with a thickness of 120 nm was thermally grown on top
of the silicon substrate and used as gate dielectric. IZO solution was
spin-coated on the SiO2/Si substrates at a speed of 8000 rpm for
30 s and annealed at 500°C for 1 h in a furnace in an atmospheric
environment. An IZO thin film with a thickness of about 10 nm was
obtained on top of the SiO2.