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4hv.org :: Forums :: General Science and Electronics
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help needed for a buck converter

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Mattski
Mon Jul 18 2011, 07:21AM
Mattski Registered Member #1792 Joined: Fri Oct 31 2008, 08:12PM
Location: University of California
Posts: 527
wrote ...
its powered by an ATX psu so the ground terminal is acutally connected to the mains ground.
the gate is 10v relative to ground and source is 6v relative to ground.
If you ever want to directly measure a voltage like this and you only have a scope with grounded probes you can put one scope on the gate, the other at the source, and ground both probes, then put the scope in A-B mode.

wrote ...
UPDATE: Given the above pic... i think you need a diode between the mosfet and inductor, with the polarity arranged so that the inductor back EMF cant get to the mosfet (reversed biased horizontal diode) but then the Back EMF gets conducted through the vertical diode (forward biased) and to the load, i think this will solve your heat problems.
Nope, the "back emf" is required for the circuit to work, the diode from ground to the inductor's left side will conduct the inductor's current when the FET turns off, and the voltage at this node will go below that of circuit ground, which will further reverse bias the body diode of the FET.

If you're getting lots of heating there are two things: conduction loss and switching loss. If you're fully turning the FET on (usually requires about 10V Vgs) then you expect a power loss of Iload^2*Rds,on=4A^2*.04R=640mW (assuming low current ripple with a large enough inductor, with higher ripple current it would be a bit higher). So you could try getting a higher Vgs. With a NMOS device you have to use tricks like the battery trick Patrick suggested, or other high side driver techniques including gate drive transformers or bootstrap capacitor circuits, because you want that gate voltage when turned on to be optimally about 10V higher than the input at the drain. As Sulaimain pointed out a PMOS device you are pulling the gate to ground which is much easier, but PMOS devices cost slightly more and are a bit slower for the same current.

So if conduction loss is not causing your heating then it might be slow switching of the gate. Take a look at Vgs using the technique above and zoom in on the time scale to see how long it takes to charge and disharge the gate. While it charges up and down it goes into an intermediate "linear" state with high power dissipation, and if the gate drive is slow it will result in higher power dissipation in the FET.

Edit:
wrote ...
at around 30% duty cycle the current through 12v supply and drain is 1.3A, voltage at source relative to ground is 7 volts
Oh, that's the problem then. If you have 12V in and you're seeing only 7V at teh source your FET is dropping 5V. At 4A that's 20W, times your duty cycle so with 30% that's 6W which seems kind of high for a circuit with these specs. It likely means your FET is not fully on so you need a higher gate voltage still, so either more batteries, the isolation transformer, bootstrap cap, or PMOS device.
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Patrick
Mon Jul 18 2011, 05:43PM
Patrick Registered Member #2431 Joined: Tue Oct 13 2009, 09:47PM
Location: Chico, CA. USA
Posts: 5639
Mattski wrote ...

wrote ...
its powered by an ATX psu so the ground terminal is acutally connected to the mains ground.
the gate is 10v relative to ground and source is 6v relative to ground.
If you ever want to directly measure a voltage like this and you only have a scope with grounded probes you can put one scope on the gate, the other at the source, and ground both probes, then put the scope in A-B mode.
I didnt want to make this to complicated for him before i knew what he could really do.


Mattski wrote ...

wrote ...
UPDATE: Given the above pic... i think you need a diode between the mosfet and inductor, with the polarity arranged so that the inductor back EMF cant get to the mosfet (reversed biased horizontal diode) but then the Back EMF gets conducted through the vertical diode (forward biased) and to the load, i think this will solve your heat problems.
Nope, the "back emf" is required for the circuit to work, the diode from ground to the inductor's left side will conduct the inductor's current when the FET turns off, and the voltage at this node will go below that of circuit ground, which will further reverse bias the body diode of the FET.
Now that im sober i realize the polarity is added at the time of switching...DUH. And yes i was wrong about the internal diode too... crap.


Mattski wrote ...

If you're getting lots of heating there are two things: conduction loss and switching loss. If you're fully turning the FET on (usually requires about 10V Vgs) then you expect a power loss of Iload^2*Rds,on=4A^2*.04R=640mW (assuming low current ripple with a large enough inductor, with higher ripple current it would be a bit higher). So you could try getting a higher Vgs. With a NMOS device you have to use tricks like the battery trick Patrick suggested, or other high side driver techniques including gate drive transformers or bootstrap capacitor circuits, because you want that gate voltage when turned on to be optimally about 10V higher than the input at the drain. As Sulaimain pointed out a PMOS device you are pulling the gate to ground which is much easier, but PMOS devices cost slightly more and are a bit slower for the same current.

So if conduction loss is not causing your heating then it might be slow switching of the gate. Take a look at Vgs using the technique above and zoom in on the time scale to see how long it takes to charge and disharge the gate. While it charges up and down it goes into an intermediate "linear" state with high power dissipation, and if the gate drive is slow it will result in higher power dissipation in the FET.
Ok lets revisit the gate conditions then, i thought having 6V across the gate with a spec of Vgs threshold of 4V would have minimized the linear region to a brief time. but if the drop of 12 - 7 = 5 V x I = W, is across the transistor then that seems to indicate a gate drive deficiency.



Mattski wrote ...

Edit:
wrote ...
at around 30% duty cycle the current through 12v supply and drain is 1.3A, voltage at source relative to ground is 7 volts
Oh, that's the problem then. If you have 12V in and you're seeing only 7V at teh source your FET is dropping 5V. At 4A that's 20W, times your duty cycle so with 30% that's 6W which seems kind of high for a circuit with these specs. It likely means your FET is not fully on so you need a higher gate voltage still, so either more batteries, the isolation transformer, bootstrap cap, or PMOS device.
Im wondering if a bootstrap diode/cap would be possible for him to add using discrete components?
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haxor5354
Mon Jul 18 2011, 07:31PM
haxor5354 Registered Member #2063 Joined: Sat Apr 04 2009, 03:16PM
Location: Toronto
Posts: 352
Pwmamp
the mosfet doesn't break a sweat if I do this.
but as soon as I add filter cap parallel to the load, the mosfet heats up neutral

also, if you take a look at the CPU power supply on motherboards, they look like buck converters, it has n-mosfets,inductors and filter caps but to diodes. but the mosfets have an internal drain-source diode.
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Patrick
Mon Jul 18 2011, 10:53PM
Patrick Registered Member #2431 Joined: Tue Oct 13 2009, 09:47PM
Location: Chico, CA. USA
Posts: 5639
haxor5354 wrote ...

Pwmamp
the mosfet doesn't break a sweat if I do this.
but as soon as I add filter cap parallel to the load, the mosfet heats up neutral

also, if you take a look at the CPU power supply on motherboards, they look like buck converters, it has n-mosfets,inductors and filter caps but to diodes. but the mosfets have an internal drain-source diode.
This is a great circuit! let me think about it for a minute.

OK, so why would it work fine as pictured above, yet not anyother way?

OK im reading some MOSFET switching PDF's right now, i think extra capacitence is being fed forward from the load to slow down the gate turn on/off. There is a special case of coupling im not sure though.

Link2 I think this is a good explantation, unless others feel differently. Im reading all four sections.
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haxor5354
Mon Jul 18 2011, 11:12PM
haxor5354 Registered Member #2063 Joined: Sat Apr 04 2009, 03:16PM
Location: Toronto
Posts: 352
wait hold on...... now it doesn't heat up with a cap parallel to load confused now im baked
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Patrick
Mon Jul 18 2011, 11:15PM
Patrick Registered Member #2431 Joined: Tue Oct 13 2009, 09:47PM
Location: Chico, CA. USA
Posts: 5639
haxor5354 wrote ...

wait hold on...... now it doesn't heat up with a cap parallel to load confused now im baked
Yeah i was really pressed for an explanation for why the cap makes such a difference... inductive or capacitive switching is more complicated then resistive switching, so the transistors phases change quite abit....

I dont see why we are having such difficulty with this circuit !?
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Sulaiman
Mon Jul 18 2011, 11:34PM
Sulaiman Registered Member #162 Joined: Mon Feb 13 2006, 10:25AM
Location: United Kingdom
Posts: 3140
For about $1 you can buy an IRF9Z34 which would easily do the job
there are over 1000 different p-channel mosfets on the market
choose one and use it instead of an n-channel !
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Patrick
Mon Jul 18 2011, 11:43PM
Patrick Registered Member #2431 Joined: Tue Oct 13 2009, 09:47PM
Location: Chico, CA. USA
Posts: 5639
Sulaiman wrote ...

For about $1 you can buy an IRF9Z34 which would easily do the job
there are over 1000 different p-channel mosfets on the market
choose one and use it instead of an n-channel !
Yeah maybe, i think the gate switching is the problem not the internal diode. So maybe a P channel, or is it possible to reverse the circuit such that he can still use a N-channel device, if only temporary just to see what the problem/solution is?

Now that i think about it, just developing a capacitor bootsrtapper or GDT is the answer for verifying the solution\problem heating.
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haxor5354
Mon Jul 18 2011, 11:45PM
haxor5354 Registered Member #2063 Joined: Sat Apr 04 2009, 03:16PM
Location: Toronto
Posts: 352
Sulaiman wrote ...

For about $1 you can buy an IRF9Z34 which would easily do the job
there are over 1000 different p-channel mosfets on the market
choose one and use it instead of an n-channel !


ok yeah.... maybe substituting parts and using random parts isn't such a good idea
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haxor5354
Mon Jul 18 2011, 11:51PM
haxor5354 Registered Member #2063 Joined: Sat Apr 04 2009, 03:16PM
Location: Toronto
Posts: 352
so gate driving for FETs are like pre-amp for vacuum tubes?
and whats different between mosfets and IGBTs? they both voltage controlled, maybe IGBTs can handle more voltage.
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