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Registered Member #618
Joined: Sat Mar 31 2007, 04:15AM
Location: Us-Great Lakes
Posts: 628
OK well I orderded all the parts I could not sample, And so before I go into prototype testing I'd just like to see if any of you guys can spot something I might have missed.
Registered Member #528
Joined: Fri Feb 16 2007, 10:32PM
Location: Warsaw, Poland
Posts: 166
What 1N5819 Schottkies paralled with gate resistors do and how it works?
The capacitors at LM78XX's outputs are quite big, I think few hundreds of microfarads are enough. Somewhere I've readed it's a good idea to put diode across input and output to return energy to rail instead through voltage regulators, preventing from damage, but this practice doesn't appear to be a common thing there.
Another question, decoupling capacitors have to be placed across voltage rails, or elements inputs, or everywhere?
Registered Member #528
Joined: Fri Feb 16 2007, 10:32PM
Location: Warsaw, Poland
Posts: 166
I'm not sure if I understand how it does work. Is it faster for gate charge to discharge through diode instead of resistor (because resistor has coil, it has inductance which at high frequencies gives much higher reactance than diode)?
If yes, would I have right saying that's useful with large charges (especially in IGBT modules)? I mainly see this diode in DRSSTCs with powerful IGBTs, not in SSTCs, hence this question.
And would you mind answering question regarding decoupling capacitors?
Sorry to hijack topic, Ken, but I guess it might be useful for you, too :)
Registered Member #618
Joined: Sat Mar 31 2007, 04:15AM
Location: Us-Great Lakes
Posts: 628
An IGBT is similar to a MOSFET both have gates that are insulated from the rest of the unit, when the Gate is made to turn the unit on It charges like a capacitor, but when the IGBT or Fet turns off THe Gate discharges like a cap, If you just have the Gate Resistor then the discharge takes longer, but With the Diodes in the position they are in It allows for faster Discharging of the gate or Allows the FET\IGBT to turn off faster.
Am I right about that? (Just trying to help Tonic and myself understand it)
ALso So far this Is What I've got setup.
Once Again if you notice something that could or needs to be changed Please let me know.
Off Topic Real quick Anyone know how to get Picture links like these to be placed Side by side, so I can make this post be shorter while still keeping everything on it?
Registered Member #793
Joined: Sun May 20 2007, 06:50PM
Location: Minneapolis, MN
Posts: 35
Ken, Tonic,
Generally speaking MOSFETs turn on about as fast as they turn off and the gate resistor is there to limit large transient spikes. IGBTs though tend to have have a much longer turn off already, so a gate resistor is not needed to limit spikes and the resistor would just make the turn off even longer; so it's bypassed with a diode.
Ken, What are C19 and C20 in your power section layout (the IGBT PCB). I didn't see them on the schematic.
Registered Member #618
Joined: Sat Mar 31 2007, 04:15AM
Location: Us-Great Lakes
Posts: 628
Crap..... Sorry for the double post I needed to repost the schemes, I thought I had screens of the newer ones with revised part #'s, at any rate THESE are the corrected Revised schematics.
C19\20 are were previously C17's, also J4 (HV IN) is so I could place pads for the power to enter the board.
Could I trouble a Mod to delete that previous post. (My apologies for double posting!)
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