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4hv.org :: Forums :: Tesla Coils
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I keep blowing these MOSFETS

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zzz_julian_zzz
Sat Dec 19 2015, 05:31AM
zzz_julian_zzz Registered Member #3964 Joined: Thu Jun 23 2011, 03:23AM
Location: Valenzuela City
Posts: 332
Hi Benjamin,

If you can, please show picture of your actual bridge, driver, coil and schematic used. It will help us to help you.

Q1: do you have oscilloscope?
Q2: What current magnitude you designed your primary?
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Wolfram
Sat Dec 19 2015, 03:39PM
Wolfram Registered Member #33 Joined: Sat Feb 04 2006, 01:31PM
Location: Norway
Posts: 971
Sigurthr wrote ...

If they're not getting hot but they're dying it's almost always an overvoltage issue. Just because you only placed 18V on the drain doesn't mean that's all that is going to be there. When operating an inductive load with a single ended configuration you get reflected flyback spikes whenever the switch opens up. I've personally observed a 12V supply cause spikes well over 400V.

My advice: use an external fast antiparallel diode rated for very high voltage, and consider placing a flywheel one across the primary. Other than that you can attempt Class-E configuration.

Antiparallel diodes don't do anything against inductive switching spikes, which appear in the forward direction. TVS diodes for clamping or RC snubbers to absorb the spikes are possible solutions. The most important part is to minimize the energy available in the spikes in the first place.

Antiparallel fast diodes generally make sense when switching a series resonant load below the resonant frequency, which is a separate problem. The point is to avoid forced recovery of the internal MOSFET diodes which are usually quite slow.
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hen918
Sat Dec 19 2015, 10:45PM
hen918 Registered Member #11591 Joined: Wed Mar 20 2013, 08:20PM
Location: UK
Posts: 556
Try looking at the gate voltage on a scope I had a very similar problem when parasitic inductance was causing my gate voltage to spike several volts above the maximum rating.
Working absolutely fine, stone cold, and then tic, my power supply tripped. Sure enough, two dead MOSFETs. (they were in an H-bridge)
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jdub1581
Sat Dec 19 2015, 11:17PM
jdub1581 Registered Member #55205 Joined: Mon Jun 08 2015, 06:06AM
Location:
Posts: 15
hen918 wrote ...

Try looking at the gate voltage on a scope I had a very similar problem when parasitic inductance was causing my gate voltage to spike several volts above the maximum rating.
Working absolutely fine, stone cold, and then tic, my power supply tripped. Sure enough, two dead MOSFETs. (they were in an H-bridge)

Sound exactly like what my IGBT's did.. Arcs, tic, dead.. Or just tic dead.. Fuses fried..

I've been reading up on how to reduce parasitic oscillations, and keep seeing people saying to put small ferrite beads on the gate pin..
As I recall basically it acts "sort-of" like a variable resistor where it's impedance changes with input freq when used with 'Rg'. Thus dampening the the spikes/oscillations.?.?
I happen to have quite a few; some up to 3/8" long (fit the full pin TO220).. Guess I can test with a single fet..
Can you refer me to more material on how to fix it?
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Benjamin
Sat Dec 19 2015, 11:44PM
Benjamin Registered Member #54655 Joined: Thu Mar 19 2015, 05:56PM
Location: BC, Canada
Posts: 82
I think that the parasitic inductance is the problem because I had some long wires hooking everything up. I think I'm just going to buy some different MOSFETs that are proven to work in an sstc and build a better half or full bridge design.
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Sigurthr
Sun Dec 20 2015, 12:53AM
Sigurthr Registered Member #4463 Joined: Wed Apr 18 2012, 08:08AM
Location: MI's Upper Peninsula
Posts: 597
Wolfram wrote ...

Antiparallel diodes don't do anything against inductive switching spikes, which appear in the forward direction. TVS diodes for clamping or RC snubbers to absorb the spikes are possible solutions. The most important part is to minimize the energy available in the spikes in the first place.

Antiparallel fast diodes generally make sense when switching a series resonant load below the resonant frequency, which is a separate problem. The point is to avoid forced recovery of the internal MOSFET diodes which are usually quite slow.


Thanks, I always get confused about the polarities involved in transient magnetics/induction. My Class-E suggestion at least still makes sense then.

What I do for my mosfet builds is isolate the body diode completely using a series ultrafast high current diode, and then add an antiparallel fast diode in parallel to the series'd fet/diode. I've found doing this allows the switch to survive very capacitive and inductive loads. The tradeoff is that you have power wasted in the series diode, but it's linear like in an IGBT. I guess in this (inductive) case the added reverse voltage blocking is what really works, and not the antiparallel's soft recovery.

Other than class-E, I've never tried an RC solution for a single ended configuration, wouldn't the R present a significant waste of power?
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