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Registered Member #1875
Joined: Sun Dec 21 2008, 06:36PM
Location:
Posts: 635
But if you CAN touch it, you know it's fine, thermally, at least. Anyhow, I'd prefer my circuits stay below water's boiling point... it just seems safer.
Registered Member #1535
Joined: Wed Jun 11 2008, 11:37PM
Location: Northeastern Pennsylvania - USA
Posts: 117
My topology is a 1/2 bridge fed by a doubler from 115vac in. OCD is set to 550a. My gates are fed +15/-15 from a GDT. Bridge on-time doesn't exceed 4% at the moment.
Registered Member #2922
Joined: Sun Jun 13 2010, 12:08AM
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Posts: 226
With 15V I think that you cannot push this device to 600A...
i think too.. i am thinking in put +-20 or more in the gates, in the datasheet is writed that it can manage +-30v in transient mode, but i don't know if reduce the life of the igbt..??
Registered Member #2481
Joined: Mon Nov 23 2009, 03:07PM
Location: ITALY
Posts: 134
Gregory wrote ...
With 15V I think that you cannot push this device to 600A...
i think too.. i am thinking in put +-20 or more in the gates, in the datasheet is writed that it can manage +-30v in transient mode, but i don't know if reduce the life of the igbt..??
This is quite a mistery... Also because they do not specify what "transient" means...
A good way to improve the gate driving is to connect the emitters of the IGBT in the "kelvin" mode, that is, use one emitter terminal to connect the "return" of the gate drive transformer and ONLY the other emitter terminal as actual power emitter. In this way you will reduce the negative effect of stray inductance on the emitter internal connection (bonding) which tends to decreas the actual gate-emitter voltage especially at high frequncies/currents.
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