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Registered Member #75
Joined: Thu Feb 09 2006, 09:30AM
Location: Montana, USA
Posts: 711
Take this with a pinch of salt as I know next to nothing about semiconductors. Have you considered using the silicon die from a fried MOSFET as your starting point? I imagine with the right device you would get the right bulk doping, and all the features that make it a MOSFET and not a micro-controller live in a very superficial surface layer.
Registered Member #2893
Joined: Tue Jun 01 2010, 09:25PM
Location: Cali-forn. i. a.
Posts: 2242
"Alfa Asear has perhaps some of the largest and finest selection of elemental metals I could think of that sell in all sizes, configurations, & weights"
Yeah, at $148.00 for 10 grams...
"mosfet..."
It'd be incredibly hard to get it out of the plastic and besides, that would be cheating!
Registered Member #1792
Joined: Fri Oct 31 2008, 08:12PM
Location: University of California
Posts: 527
Have you thought about just getting some silicon wafers on ebay? It's not germanium, but there are many varieties readily available at reasonable prices. I think it should work because if I understand how the point contact transistor works it's just two Schottky diodes rather than two PN diodes as in a typical BJT, and you can definitely make a schottky diode on silicon.
"Ash_Small" wrote ... I can't directly answer your question, but......research 'epitaxy'....it is 'second generation transistors'....I think first gen. was something like 'homeotaxy'....it involves getting some vacuum gear......(at least, I think it does.....I'm interested in this project).....Unless anyone else knows better.........
Homoepitaxy is growing a material epitaxially but with just one material instead of multiple materials as for a heterojunction. It's usually done at ultra-high vacuums which are difficult to do at home. CVD is probably easier since you don't need as much vacuum, though getting the sources is probably hard, as many are toxic or flammable.
Registered Member #3414
Joined: Sun Nov 14 2010, 05:05PM
Location: UK
Posts: 4245
I'm sure you're correct, Mattski. I agree with your points regarding CVD. Next step for Grenadier after doides and transistors will (probably) be photo-electric cells. I did see a website about 'homebrew' photo-electric cells, but can't find the link and they were pretty weak anyway.
If Grenadier continues this avenue of research he will have to embrace vacuum technology at some point. (Unless anyone knows different.)
I've some notes on this somewhere, I'll try and dig them out. I think the site I reffered to above just used vacuum deposition (evaparation, I think) but to get decent results I think you need CVD and Ion Etch (unless anyone knows different?).
Registered Member #2893
Joined: Tue Jun 01 2010, 09:25PM
Location: Cali-forn. i. a.
Posts: 2242
I emailed a wafer company and they said they have some p-type germanium. Just a question, does anyone know if they used p-type or n-type germanium in the transistor?
"If Grenadier continues this avenue of research he will have to embrace vacuum technology at some point. (Unless anyone knows different.)"
You shall find no research here, I'm just doing this for fun.
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