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Registered Member #11591
Joined: Wed Mar 20 2013, 08:20PM
Location: UK
Posts: 556
Looks like the ultimate MOSFET. Package looks a bit weird though, although it should be more efficient at high powers, you would have thought the 7L D2PAK would be better suited to lower voltage, higher current applications, where the package is often the limiting factor.
Registered Member #2431
Joined: Tue Oct 13 2009, 09:47PM
Location: Chico, CA. USA
Posts: 5639
This is a great package and transistor, i finnally have a "DS" that comes off the die, instead of a dam PCB trace with incudtance+Vdrop+current switchng time. now the driving IC can actually see real measurements.
Registered Member #162
Joined: Mon Feb 13 2006, 10:25AM
Location: United Kingdom
Posts: 3140
For c.r.t. T.V./Monitor type flyback I'm considering this 1700V SiC mosfet not quite as fast but very useful...... (I'm not really converted to surface mount yet)
Registered Member #3414
Joined: Sun Nov 14 2010, 05:05PM
Location: UK
Posts: 4245
Mouser has them in stock in UK for £7.21
This is about one sixth the price of the previous generation ones I was looking at, although the others had a slightly better voltage rating and was slightly faster.
These should still be plenty fast enough for what I have in mind, though. Anyone else who has been thinking about the 'inductive adder pulse generator' circuits that were being discussed here a while back should take a look at these as well
Registered Member #162
Joined: Mon Feb 13 2006, 10:25AM
Location: United Kingdom
Posts: 3140
A small but maybe important thing I noticed, the SiC mosfet reverse gate voltages are much lower than the forward voltage, some designs may have problems with this.
Registered Member #1403
Joined: Tue Mar 18 2008, 06:05PM
Location: Denmark, Odense C
Posts: 1968
Sulaiman wrote ...
A small but maybe important thing I noticed, the SiC mosfet reverse gate voltages are much lower than the forward voltage, some designs may have problems with this.
VGSmax Gate - Source Voltage -8/+18 V (Absolute maximum values)
Yes, most driver circuits will have to be changed, preferably to a modern mosfet driver ic that can do those exact voltages, atleast the lower turn off voltage. Like:
Registered Member #3414
Joined: Sun Nov 14 2010, 05:05PM
Location: UK
Posts: 4245
Sulaiman wrote ...
A small but maybe important thing I noticed, the SiC mosfet reverse gate voltages are much lower than the forward voltage, some designs may have problems with this.
It doesn't mention anything in the datasheet. (link in OP)
I presume you are referring to reverse voltage spikes when used in flyback topology.
This is exactly what I was planning on using them for. Are you not also considering using SIC's for flybacks?
It does mention something about not exceeding -4 volts between gate and source if using the integral freewheeling diode.
Mads Barnkob wrote ...
VGSmax Gate - Source Voltage -8/+18 V (Absolute maximum values)
Yes, most driver circuits will have to be changed, preferably to a modern mosfet driver ic that can do those exact voltages, atleast the lower turn off voltage. Like:
I presume you'd need to use the maximum voltages in order to achieve the published switching times. Does this mean blocking the integral freewheeling diode and adding an external Shottky, or something?
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New 900V SiC MOSFET launched by Cree, 11.5nS switching time
